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www.irf.com 1 07/30/09 IRF8852PBF hexfet power mosfet notes through are on page 10 tssop-8 description ultra low on-resistance dual n-channel mosfet very small soic package low profile (< 1.1mm) available in tape & reel lead-free hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design, that international rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. the tssop-8 package has 45% less footprint area than the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and pcmcia cards.

v dss r ds(on) max id 11.3m @v gs = 10v 7.8a 15.4m @v gs = 4.5v 6.2a 25v ordering information: see detailed ordering and shipping information on the last page of this data sheet. absolute maximum ratin g s parameter units v ds drain-to-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c v gs gate-to-source voltage v t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 53 r ja junction-to-ambient ??? 125 c/w w c a -55 to + 150 1.0 0.01 0.64 20 max. 7.8 6.2 62.4 25
2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) static drain-to-source on-resistance ??? 9.2 11.3 ??? 12.5 15.4 v gs(th) gate threshold voltage 1.35 1.8 2.35 v i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 19 ??? ??? s q g total gate charge ??? 9.5 ??? nc q g total gate charge ??? 17.4 26.1 q gs gate-to-source charge ??? 3.1 ??? q gd gate-to-drain charge ??? 2.9 ??? r g gate resistance ??? 2.8 ??? ? t d(on) turn-on delay time ??? 11.4 ??? t r rise time ??? 10.9 ??? t d(off) turn-off delay time ??? 70.8 ??? t f fall time ??? 28.9 ??? c iss input capacitance ??? 1151 ??? c oss output capacitance ??? 295 ??? c rss reverse transfer capacitance ??? 134 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 32 48 ns q rr reverse recovery charge ??? 17 26 nc m ? a pf ns nc ??? 62.4 ??? ??? ??? ??? conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 7.8a v dd = 13v, v gs = 10v i d = 1.0a v gs = 20v v gs = -20v i d = 7.8a v ds = 20v, v gs = 0v v gs = 10v di/dt = 100a/ s t j = 25c, i s = 1.3a, v gs = 0v showing the integral reverse p-n junction diode. v ds = 20v, v gs = 0v, t j = 70c na a t j = 25c, i f = 1.3a, v dd = 20v ? = 1.0mhz i d = 7.8a,v ds = 13v, v gs = 4.5v 1.3 mosfet symbol conditions v gs = 4.5v, i d = 6.2a v ds = 13v typ. ??? v ds = v gs , i d = 25a r d =13 ? v ds = 10v, i d = 7.8a r g =30 ? max. 6.5 7.8 v gs = 0v v ds = 20v
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 6.0v 4.5v 3.5v 3.0v 2.7v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 8.0v 6.0v 4.5v 3.5v 3.0v 2.7v bottom 2.5v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 7.8a v gs = 10v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 7.8a 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. typical on-resistance vs. gate voltage 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 7 8 9 i d , d r a i n c u r r e n t ( a ) 2 4 6 8 10 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 7.8a t j = 25c t j = 125c 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a ri (c/w) i (sec) 2.65337 0.00011 18.2380 0.027128 74.5829 0.64107 29.5446 11.11
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 13. typical threshold voltage vs. junction temperature fig 15. maximum avalanche energy vs. drain current fig 14. typical power vs. time 0 10 20 30 40 50 60 70 i d , drain current (a) 8 10 12 14 16 18 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 10v vgs = 4.5v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 25a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 5 10 15 20 25 30 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.7a 3.2a bottom 7.8a 0.001 0.01 0.10 1 10 100 time (sec) 0 5 10 15 20 25 30 35 40 45 p o w e r ( w )
www.irf.com 7 fig 17. gate charge test circuit 1k vcc dut 0 l s 20k fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. switching time waveforms fig 18a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
8 www.irf.com note: for the most current drawing please refer to ir website at http://www.irf.com/package/

!!! " " " " tssop8 package outline dimensions are shown in milimeters (inches)

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tssop-8 tape and reel information note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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10 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2009 ? qualification standards can be found at international rectifier?s web site http://ww.irf.com ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.214mh, r g = 25? , i as = 7.8a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. note form quantit y irf8852trpbf tssop-8 ta p e and reel 4000 orderable part number package type standard pack msl 1 (per jedec j-std-020d ??? ) rohs compliant yes moisture sensitivity level tssop-8 qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines)

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